DocumentCode
1143696
Title
Study of Optoelectronic Sampler Linearity for Analog-to-Digital Conversion of RF Signals
Author
Delord, Jean-Marie ; Roux, Jean-François ; Coutaz, Jean-Louis ; Breuil, Nicolas
Author_Institution
IMEP-LAHC, Univ. de Savoie, Le Bourget, France
Volume
21
Issue
19
fYear
2009
Firstpage
1369
Lastpage
1371
Abstract
Photoconductive sampling of 10-GHz radio- frequency (RF) signal is demonstrated using interdigitated photoswitches made from low-temperature grown GaAs. We study the linearity of the device for RF input power ranging from -3 to 20 dBm. For moderate levels, the sampler shows a spurious-free dynamic range (SFDR) better than 40 dB. For the largest values, it exhibits a nonlinear response that deteriorates both SFDR and resolution. This nonlinearity is attributed to drift velocity saturation in the semiconductor material.
Keywords
III-V semiconductors; analogue-digital conversion; gallium arsenide; optical switches; optoelectronic devices; GaAs; analog-to-digital conversion; drift velocity saturation; frequency 10 GHz; interdigitated photoswitches; low-temperature grown; optoelectronic sampler linearity; photoconductive sampling; radio-frequency signal; Analog–digital conversion; MSM devices; nonlinear distorsion; optoelectronic devices; photoconductive devices;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2009.2026912
Filename
5170040
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