• DocumentCode
    1143696
  • Title

    Study of Optoelectronic Sampler Linearity for Analog-to-Digital Conversion of RF Signals

  • Author

    Delord, Jean-Marie ; Roux, Jean-François ; Coutaz, Jean-Louis ; Breuil, Nicolas

  • Author_Institution
    IMEP-LAHC, Univ. de Savoie, Le Bourget, France
  • Volume
    21
  • Issue
    19
  • fYear
    2009
  • Firstpage
    1369
  • Lastpage
    1371
  • Abstract
    Photoconductive sampling of 10-GHz radio- frequency (RF) signal is demonstrated using interdigitated photoswitches made from low-temperature grown GaAs. We study the linearity of the device for RF input power ranging from -3 to 20 dBm. For moderate levels, the sampler shows a spurious-free dynamic range (SFDR) better than 40 dB. For the largest values, it exhibits a nonlinear response that deteriorates both SFDR and resolution. This nonlinearity is attributed to drift velocity saturation in the semiconductor material.
  • Keywords
    III-V semiconductors; analogue-digital conversion; gallium arsenide; optical switches; optoelectronic devices; GaAs; analog-to-digital conversion; drift velocity saturation; frequency 10 GHz; interdigitated photoswitches; low-temperature grown; optoelectronic sampler linearity; photoconductive sampling; radio-frequency signal; Analog–digital conversion; MSM devices; nonlinear distorsion; optoelectronic devices; photoconductive devices;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2009.2026912
  • Filename
    5170040