• DocumentCode
    1144770
  • Title

    Experimental tests of proposed mechanisms for gradual degradation of GaAs double-heterostructure injection lasers

  • Author

    Newman, David ; Ritchie, S. ; O´Hara, S.

  • Author_Institution
    British Post Office Research Dept. Martlesham Heath, Ipswich, Suffold, England
  • Volume
    8
  • Issue
    3
  • fYear
    1972
  • fDate
    3/1/1972 12:00:00 AM
  • Firstpage
    379
  • Lastpage
    382
  • Abstract
    Degradation rates of double-heterostructure GaAs lasers have been measured and found to vary superlinearly with the injected current density above threshold. The results are discussed in the context of the Gold-Weisberg phonon-kick and the extended Longini field-inhibited diffusion degradation mechanisms.
  • Keywords
    Charge carrier processes; Current density; Degradation; Gallium arsenide; P-n junctions; Radiative recombination; Stimulated emission; Testing; Threshold current; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1972.1076960
  • Filename
    1076960
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1144770