DocumentCode
1145330
Title
Carrier recombination influence on the SOIMOSFET floating body effect
Author
Koh, R. ; Mogami, T.
Author_Institution
Microelectron. Res. Labs., NEC Corp., Kanagawa, Japan
Volume
15
Issue
9
fYear
1994
Firstpage
327
Lastpage
329
Abstract
The carrier recombination influence on the floating body effect for fully depleted n-channel SOIMOSFET was analyzed by device simulation. It was found that the hole diffusion to the source electrode is negligibly small and that the surface recombination for the generated hole dominates the hole extinction, at the subthreshold region. Based on the simulated result, an analytical model on the hole concentration is proposed, in which the recombination velocity is explicitly included. The model explains the hole concentration behavior that is responsible for the floating body effect for the fully depleted SOIMOSFET.<>
Keywords
electron-hole recombination; insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; silicon; analytical model; carrier recombination; device simulation; floating body effect; fully depleted n-channel SOIMOSFET; hole concentration; hole diffusion; surface recombination; Analytical models; Character generation; Charge carrier processes; Diodes; Electrodes; FETs; Silicon; Spontaneous emission; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.311123
Filename
311123
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