DocumentCode
1145963
Title
On the high-temperature (to 300°C) characteristics of SiGe HBTs
Author
Chen, Tianbing ; Kuo, Wei-Min Lance ; Zhao, Enhai ; Liang, Qingqing ; Jin, Zhenrong ; Cressler, John D. ; Joseph, Alvin J.
Author_Institution
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Volume
51
Issue
11
fYear
2004
Firstpage
1825
Lastpage
1832
Abstract
A comprehensive investigation of the high-temperature characteristics of advanced SiGe heterojunction bipolar transistors (HBTs) is presented, and demonstrates that, contrary to popular opinion, SiGe HBTs are potentially well-suited for many electronics applications operating at temperatures as high as 300°C.
Keywords
Ge-Si alloys; heterojunction bipolar transistors; high-temperature electronics; 300 C; SiGe; SiGe HBT; heterojunction bipolar transistors; high-temperature characteristics; BiCMOS integrated circuits; CMOS technology; Copper; Germanium silicon alloys; Heterojunction bipolar transistors; Isolation technology; Microelectronics; Silicon germanium; Temperature; Voltage; HBTs; High-temperature characteristics; SiGe heterojunction bipolar transistors; stress;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2004.836779
Filename
1347401
Link To Document