The importance of contact injection in undoped AlGaAs/GaAs heterostructures

Author

Li, Zhan-Ming ; Day, Derek J. ; McAlister, Sean P. ; Hurd, Colin M.

Author_Institution

Nat. Res. Council of Canada, Ottawa, Ont., Canada

Volume

37

Issue

3

fYear

1990

fDate

3/1/1990 12:00:00 AM

Firstpage

556

Lastpage

561

Abstract

A two-dimensional finite-difference analysis is used to simulate the current flow and charge distribution in undoped AlGaAs/GaAs MODFET structures called heterostructure insulated-gate field-effect transistors (HIGFETs). How an electron channel can be induced at the AlGaAs/GaAs interface when there is no doped supply layer is studied. The origins of the charge in this channel are studied by comparing its behavior in equilibrium with that when a current flows. By considering the different geometries of a Schottky gate and implanted source and drain contacts, the interrelationship between gate control and electron injection from the doped contact regions is shown and a graphic view of the origins of the interfacial charge in a HIGFET is given

Keywords

III-V semiconductors; aluminium compounds; difference equations; gallium arsenide; high electron mobility transistors; insulated gate field effect transistors; semiconductor device models; HIGFET; MODFET structures; Schottky gate; charge distribution; contact injection; current flow simulation; drain contacts; electron channel; electron injection; heterostructure insulated-gate field-effect transistors; interfacial charge; modelling; semiconductors; two-dimensional finite-difference analysis; undoped AlGaAs-GaAs heterostructure; Analytical models; Electrons; FETs; Finite difference methods; Gallium arsenide; Geometry; Graphics; HEMTs; Insulation; MODFETs;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.47757

Filename

47757