Electromigration reliability for a tungsten-filled via hole structure

Author

Matsuoka, Fumitomo ; Iwai, Hiroshi ; Hama, Kaoru ; Itoh, Hitoshi ; Nakata, Ranpei ; Nakakubo, Tsukasa ; Maeguchi, Kenji ; Kanzaki, Koichi

Author_Institution

Toshiba Corp., Kawasaki, Japan

Volume

37

Issue

3

fYear

1990

fDate

3/1/1990 12:00:00 AM

Firstpage

562

Lastpage

568

Abstract

Experiments have shown that the electromigration reliability for conventional nonfilled via holes decreases with via hole diameter reduction. Tungsten-filled via hole reliability, however, is independent of the via hole diameter and improves significantly compared with the nonfilled via hole structure. The electromigration failure mechanism for the tungsten-filled via hole structures was investigated by two-dimensional numerical simulation. Current crowding points were found near the via hole edge in the aluminum part. Via hole resistance change during the electromigration test was also evaluated. When aluminum-silicon was used for the metal lines, via hole resistance increased, due to the migration of silicon in the aluminum line. However, it was estimated as being negligibly small for unusual operating conditions

Keywords

VLSI; electromigration; integrated circuit technology; metallisation; reliability; tungsten; AlSi; CVD; ULSI; VLSI; W filled via hole structure; current crowding points; electromigration failure mechanism; electromigration reliability; electromigration test; multilevel interconnection; nonfilled via holes; two-dimensional numerical simulation; via hole diameter; via hole resistance; Aluminum; Electromigration; Fabrication; Insulation; Laboratories; Semiconductor devices; Silicon; Testing; Tungsten; Ultra large scale integration;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.47758

Filename

47758