Broad-band photoresponse from InAs quantum dots embedded into InGaAs graded well

Author

Jie Liang ; Ying Chao Chua ; Manasreh, M.O. ; Marega, E., Jr. ; Salamo, G.J.

Author_Institution

Dept. of Electr. Eng., Univ. of Arkansas, Fayetteville, AR, USA

Volume

26

Issue

9

fYear

2005

Firstpage

631

Lastpage

633

Abstract

A broad-band photoresponse is obtained from undoped InAs multiple quantum dots grown by the molecular beam epitaxy (MBE) technique on a (100) GaAs substrate. The quantum dots were embedded in an In/sub x/Ga/sub 1-x/As graded well where the In mole fraction is chosen in the range of 0.3 /spl ges/ x /spl ges/ 0.0. The photoresponse of the reversed biased device, obtained at 80.5 K and using the normal incident configuration, was found to span the spectral range of 3.5 - 9.5 μm. While the photoresponse is significantly high under the influence of the reverse bias voltage, the forward bias photoresponse is found to be negligible.

Keywords

infrared detectors; molecular beam epitaxial growth; quantum dots; quantum well devices; substrates; 3.5 to 9.5 micron; 80.5 K; GaAs substrate; InAs quantum dot; InGaAs graded well; broadband photoresponse; indium compounds; infrared detector; infrared measurement; molecular beam epitaxy technique; normal incident configuration; reverse bias voltage; reversed biased device; undoped InAs multiple quantum dot; Doping; Gallium arsenide; Indium gallium arsenide; Infrared detectors; Molecular beam epitaxial growth; Physics; Quantum dots; US Department of Transportation; Voltage; Wavelength measurement; Indium compounds; infrared detectors; infrared measurements; quantum dots;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2005.854392

Filename

1498981