Channel backscattering characteristics of uniaxially strained nanoscale CMOSFETs

Author

Lin, Hong-Nien ; Chen, Hung-Wei ; Ko, Chih-Hsin ; Ge, Chung-Hu ; Lin, Horng-Chih ; Huang, Tiao-Yuan ; Lee, Wen-Chin

Author_Institution

Inst. of Electron., Nat. Chiao-Tung Univ., Hsinchu, Taiwan

Volume

26

Issue

9

fYear

2005

Firstpage

676

Lastpage

678

Abstract

Channel backscattering characteristics of uniaxially strained nanoscale CMOSFETs are reported for the first time. Channel backscattering ratio increases and decreases under uniaxial tensile and compressive strain, respectively. It is found that in sub-100-nm devices, strain-induced modulation of carrier mean-free path for backscattering and reduction in k_BT layer thickness are responsible for the different behaviors of backscattering ratio. Nevertheless, the source-side injection velocity improves irrespective of the strain polarities. The impact of channel backscattering ratio on drive current is also analyzed in terms of ballistic efficiency and injection velocity.

Keywords

CMOS integrated circuits; MOSFET; backscatter; ballistic transport; compressive strength; nanoelectronics; tensile strength; backscattering ratio; ballistic efficiency; carrier mean-free path; channel backscattering; compressive strain; drive current; k_BT layer thickness; source-side injection velocity; strain-induced modulation; uniaxial tensile strain; uniaxially strained nanoscale CMOSFET; Backscatter; Ballistic transport; CMOSFETs; Capacitive sensors; MOSFETs; Scattering; Substrates; Tensile strain; Tensile stress; Uniaxial strain; MOSFETs; scattering; uniaxial strain;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2005.853640

Filename

1498996