Twelve-channel strained-layer InGaAs-GaAs-AlGaAs buried heterostructure quantum well laser array for WDM applications by selective-area MOCVD

Author

Cockerill, T.M. ; Lammert, R.M. ; Forbes, D.V. ; Osowski, M.L. ; Coleman, J.J.

Author_Institution

Microelectron. Lab., Illinois Univ., Urbana, IL, USA

Volume

6

Issue

7

fYear

1994

fDate

7/1/1994 12:00:00 AM

Firstpage

786

Lastpage

788

Abstract

Selective-area epitaxy is used to fabricate a twelve-channel strained layer InGaAs-GaAs-AlGaAs buried heterostructure quantum well laser array suitable for wavelength division multiplexing applications. The measured wavelength separation between elements is 1.9 nm, in good agreement with the 2 nm design value.<>

Keywords

III-V semiconductors; chemical vapour deposition; gallium arsenide; gallium compounds; indium compounds; internal stresses; optical communication equipment; semiconductor growth; semiconductor laser arrays; semiconductor lasers; vapour phase epitaxial growth; wavelength division multiplexing; InGaAs-GaAs-AlGaAs; design value; measured wavelength separation; selective-area metalorganic chemical vapour deposition; twelve-channel strained-layer InGaAs-GaAs-AlGaAs buried heterostructure quantum well laser array; wavelength division multiplexing applications; Chemical lasers; Distributed feedback devices; Epitaxial growth; Laser feedback; Laser tuning; Optical arrays; Quantum well lasers; Surface emitting lasers; Vertical cavity surface emitting lasers; Wavelength division multiplexing;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.311454

Filename

311454