DocumentCode
1148941
Title
Modeling of RF filter component based on film bulk acoustic resonator
Author
Zhao, Shi-Heng ; Dong, Shu-rong ; Zhang, Hui-Jin ; Cheng, Wei-Wei ; Han, Xiao-Xia
Author_Institution
Zhejiang Univ., Hangzhou, China
Volume
55
Issue
2
fYear
2009
fDate
5/1/2009 12:00:00 AM
Firstpage
351
Lastpage
355
Abstract
Film bulk acoustic resonator (FBAR) is widely used as an individual component RF filter in RF circuit because of its very high Q factor and low temperature coefficient. However, the RF pads and bonding wires of FBAR component will lower its Q factor. This effect is modeled by a new model named as PMBVD based on the traditional modified Butterworth-Van Dyke (MBVD) model in this paper. PMBVD model can describe FBAR individual component more exactly than MBVD model, especially near FBAR operating frequency, as proved by test results. The influences by different kinds of RF pads are also analyzed based on PMBVD. The simulations based on PMBVD show that optimized RF pads can enhance whole device Q factor to meet demands.
Keywords
Butterworth filters; Q-factor; acoustic filters; acoustic resonators; bulk acoustic wave devices; radiofrequency filters; RF circuit; RF filter component modelling; bonding wires; film bulk acoustic resonator; low temperature coefficient; modified Butterworth-Van Dyke model; very high Q-factor; Bonding; Circuits; Film bulk acoustic resonators; Levee; Q factor; Radio frequency; Resonator filters; Temperature; Testing; Wires; FBAR modeling, MBVD, RF PADS, FBAR; filter;
fLanguage
English
Journal_Title
Consumer Electronics, IEEE Transactions on
Publisher
ieee
ISSN
0098-3063
Type
jour
DOI
10.1109/TCE.2009.5174392
Filename
5174392
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