• DocumentCode
    1148941
  • Title

    Modeling of RF filter component based on film bulk acoustic resonator

  • Author

    Zhao, Shi-Heng ; Dong, Shu-rong ; Zhang, Hui-Jin ; Cheng, Wei-Wei ; Han, Xiao-Xia

  • Author_Institution
    Zhejiang Univ., Hangzhou, China
  • Volume
    55
  • Issue
    2
  • fYear
    2009
  • fDate
    5/1/2009 12:00:00 AM
  • Firstpage
    351
  • Lastpage
    355
  • Abstract
    Film bulk acoustic resonator (FBAR) is widely used as an individual component RF filter in RF circuit because of its very high Q factor and low temperature coefficient. However, the RF pads and bonding wires of FBAR component will lower its Q factor. This effect is modeled by a new model named as PMBVD based on the traditional modified Butterworth-Van Dyke (MBVD) model in this paper. PMBVD model can describe FBAR individual component more exactly than MBVD model, especially near FBAR operating frequency, as proved by test results. The influences by different kinds of RF pads are also analyzed based on PMBVD. The simulations based on PMBVD show that optimized RF pads can enhance whole device Q factor to meet demands.
  • Keywords
    Butterworth filters; Q-factor; acoustic filters; acoustic resonators; bulk acoustic wave devices; radiofrequency filters; RF circuit; RF filter component modelling; bonding wires; film bulk acoustic resonator; low temperature coefficient; modified Butterworth-Van Dyke model; very high Q-factor; Bonding; Circuits; Film bulk acoustic resonators; Levee; Q factor; Radio frequency; Resonator filters; Temperature; Testing; Wires; FBAR modeling, MBVD, RF PADS, FBAR; filter;
  • fLanguage
    English
  • Journal_Title
    Consumer Electronics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0098-3063
  • Type

    jour

  • DOI
    10.1109/TCE.2009.5174392
  • Filename
    5174392