DocumentCode
1149867
Title
Visible light-emitting diodes consisting of AlP-GaP short-period superlattices
Author
Hara, Kentaro ; Yoshino, Junki ; Kukimoto, H.
Volume
28
Issue
9
fYear
1992
fDate
4/23/1992 12:00:00 AM
Firstpage
836
Lastpage
838
Abstract
Short-period superlattices of AlP-GaP, which form a novel class of light-emitting materials in the spectral region from red to green, were applied for the first time to visible light-emitting diodes fabricated by metal organic vapour phase epitaxy. Light emission from diodes at room temperature was found to be characteristic of the superlattices: emission spectral shift toward shorter wavelengths from red to green and emission intensity increases with decreasing the period of superlattices.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; light emitting diodes; semiconductor growth; semiconductor superlattices; vapour phase epitaxial growth; AlP-GaP; emission intensity; emission spectral shift; light emission; light-emitting materials; metal organic vapour phase epitaxy; short-period superlattices; visible light-emitting diodes;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920529
Filename
135124
Link To Document