• DocumentCode
    1149867
  • Title

    Visible light-emitting diodes consisting of AlP-GaP short-period superlattices

  • Author

    Hara, Kentaro ; Yoshino, Junki ; Kukimoto, H.

  • Volume
    28
  • Issue
    9
  • fYear
    1992
  • fDate
    4/23/1992 12:00:00 AM
  • Firstpage
    836
  • Lastpage
    838
  • Abstract
    Short-period superlattices of AlP-GaP, which form a novel class of light-emitting materials in the spectral region from red to green, were applied for the first time to visible light-emitting diodes fabricated by metal organic vapour phase epitaxy. Light emission from diodes at room temperature was found to be characteristic of the superlattices: emission spectral shift toward shorter wavelengths from red to green and emission intensity increases with decreasing the period of superlattices.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; light emitting diodes; semiconductor growth; semiconductor superlattices; vapour phase epitaxial growth; AlP-GaP; emission intensity; emission spectral shift; light emission; light-emitting materials; metal organic vapour phase epitaxy; short-period superlattices; visible light-emitting diodes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920529
  • Filename
    135124