• DocumentCode
    1149917
  • Title

    Low-temperature MBE-grown In0.52Ga0.18Al0.30As/InP optical waveguides

  • Author

    Kunzel, H. ; Grote, N. ; Albrecht, P. ; Bottcher, J. ; Bornholdt, Carsten

  • Author_Institution
    Heinrich-Hertz Inst. fur Nachrichtentech. Berlin GmbH, Germany
  • Volume
    28
  • Issue
    9
  • fYear
    1992
  • fDate
    4/23/1992 12:00:00 AM
  • Firstpage
    844
  • Lastpage
    846
  • Abstract
    The MBE growth of In0.52Ga0.18Al0.30As ( lambda g=1.06 mu m) layers in the temperature range of 400-450 degrees C was demonstrated to give high-quality optical waveguides which not only exhibit low propagation losses as low as 0.5 dB/cm at lambda =1.55 mu m but concomitantly high resistivity of >104 Omega cm. The refractive index of In0.52Ga0.18Al0.30As was estimated to be 3.207+or-0.03 at lambda =1.55 mu m.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; integrated optics; molecular beam epitaxial growth; optical waveguides; refractive index; semiconductor epitaxial layers; 1.06 micron; 1.55 micron; 1E4 ohmcm; 400 to 450 C; In 0.52Ga 0.18Al 0.30As-InP; InP substrate; MBE growth; optical waveguides; propagation losses; refractive index; resistivity; rib waveguides; temperature range;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920534
  • Filename
    135129
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1149917