• DocumentCode
    1150256
  • Title

    Proton isolation of Si δ-doped GaAs

  • Author

    Kelly, Michael J. ; Lancefield, D. ; Gwilliam, R.M. ; Ritchie, D.A. ; Jones, Geb A. C. ; Linfield, Edmund H.

  • Volume
    30
  • Issue
    16
  • fYear
    1994
  • fDate
    8/4/1994 12:00:00 AM
  • Firstpage
    1359
  • Lastpage
    1360
  • Abstract
    The use of proton isolation to define Si δ-doped GaAs device structures is reported and was found to be effective in defining δ-doped layers with a two-dimensional electron density of up to 6.8×1012 cm-2. Qualitatively the electron transport characteristics of the proton-isolated devices were identical to those of equivalent mesa-etched devices
  • Keywords
    III-V semiconductors; doping profiles; gallium arsenide; ion implantation; semiconductor doping; silicon; δ-doped layers; GaAs device structures; GaAs:Si; Si δ-doped GaAs; delta doping; electron transport characteristics; proton isolation; two-dimensional electron density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940832
  • Filename
    311937
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1150256