DocumentCode
1150276
Title
The narrow-channel effect in MOSFET´s with semi-recessed oxide structures
Author
Li, E. Herbert ; Hong, K.M. ; Cheng, Y.C. ; Chan, K.Y.
Author_Institution
Hong Kong Univ., Hong Kong
Volume
37
Issue
3
fYear
1990
fDate
3/1/1990 12:00:00 AM
Firstpage
692
Lastpage
701
Abstract
An analytical expression for the threshold voltage of a narrow-channel MOSFET with a semirecessed field isolation structure is obtained by solving the Laplace equation in the field oxide using a conformal transformation. The model also applies to nonrecessed and fully recessed structures. Both the conventional and inverse narrow-channel effects are observed with a variation of the backgate bias, dopant concentration, and fixed oxide charges. The model is in good agreement with existing models
Keywords
insulated gate field effect transistors; semiconductor device models; Laplace equation; analytical expression; backgate bias; conformal transformation; dopant concentration; fixed oxide charges; inverse narrow-channel effects; narrow-channel MOSFET; semirecessed field isolation structure; threshold voltage; Circuit noise; Cities and towns; Closed-form solution; Geometry; Laplace equations; Lead compounds; MOSFET circuits; Mathematics; Semiconductor process modeling; Threshold voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.47774
Filename
47774
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