• DocumentCode
    1150456
  • Title

    Electric field effects in AlGaAs-GaAs symmetric and asymmetric coupled quantum wells

  • Author

    Juang, C. ; Kuhn, K.J. ; Darling, R.B.

  • Author_Institution
    Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
  • Volume
    27
  • Issue
    9
  • fYear
    1991
  • fDate
    9/1/1991 12:00:00 AM
  • Firstpage
    2122
  • Lastpage
    2128
  • Abstract
    A theoretical study of energy level shift and field-induced tunneling in symmetric and asymmetric coupled quantum wells is presented. Energy level shift is calculated from the time-dependent Schrodinger equation using the inverse power method. The time evolution of an electron wavepackage is shown by the application of the time-development operator of the time-independent Schrodinger equation. Energy level shift in coupled quantum wells is found to be enhanced in comparison to single quantum wells. The energy level shift in coupled quantum wells is found to be nearly linear with the applied field. Oscillation frequencies for electrons in symmetric and asymmetric coupled quantum wells are evaluated versus the applied field and compared to semiclassical prediction. Tunneling lifetimes in symmetric and asymmetric coupled quantum wells are evaluated versus the applied field
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor quantum wells; tunnelling; AlGaAs-GaAs; III-V semiconductors; applied field; asymmetric coupled quantum wells; electric field effects; electron wavepackage; energy level shift; field-induced tunneling; inverse power method; oscillation frequencies; semiclassical prediction; symmetric coupled quantum wells; time evolution; time-dependent Schrodinger equation; time-development operator; time-independent Schrodinger equation; tunneling lifetimes; Electrons; Energy states; Frequency; Laboratories; Materials science and technology; Piecewise linear techniques; Potential well; Quantum mechanics; Schrodinger equation; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/3.135170
  • Filename
    135170