DocumentCode
1150579
Title
CW GaAs MITATT source on copper heatsink up to 160 GHz
Author
Pobl, M. ; Bogner, Werner ; Gaul, L.
Author_Institution
Lehrstuhl fur Allgemeine Elektrotech. und Angewandte Elektronik, Tech. Univ. Munchen
Volume
30
Issue
16
fYear
1994
fDate
8/4/1994 12:00:00 AM
Firstpage
1316
Lastpage
1317
Abstract
The performance of a GaAs pn-junction transit time device with mixed tunnel-avalanche breakdown is described. At 164 GHz a CW output power of 1 mW has been achieved in the fundamental mode with devices on copper heatsink. This is to date the highest frequency achieved with CW GaAs diodes. The corresponding noise measure is 28 dB at 160 GHz
Keywords
III-V semiconductors; avalanche diodes; gallium arsenide; semiconductor device noise; solid-state microwave devices; transit time devices; tunnel diodes; 1 mW; 160 GHz; 28 dB; CW GaAs MITATT source; CW output power; GaAs; copper heatsink; fundamental mode; millimetre-wave devices; mixed tunnel-avalanche breakdown; noise measure; pn-junction transit time device;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19940891
Filename
311966
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