• DocumentCode
    1150665
  • Title

    Highly reliable 1.55 μm GaInAsP laser diodes buried with semi-insulating iron-doped InP

  • Author

    Matsumoto, Shinichi ; Fukuda, Motohisa ; Sato, Kiminori ; Itaya, Y. ; Yamamoto, Manabu

  • Author_Institution
    NTT Opto-Electron. Labs., Kanagawa
  • Volume
    30
  • Issue
    16
  • fYear
    1994
  • fDate
    8/4/1994 12:00:00 AM
  • Firstpage
    1305
  • Lastpage
    1306
  • Abstract
    Highly reliable 1.55 μm GaInAsP/InP laser diodes buried with semi-insulating iron-doped InP are presented that operate stably for more than 5000 h with a degradation ratio of less than 5×10-6 /h. The lifetime at 50°C is estimated to be more than 105 h
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; iron; laser frequency stability; reliability; semiconductor lasers; 1.55 micron; 50 degC; 5000 h; GaInAsP-InP:Fe; GaInAsP/InP:Fe; degradation ratio; laser diodes; laser lifetime; long-term stability; reliability;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940889
  • Filename
    311973
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1150665