Optical and RF characteristics of short-cavity-length multiquantum-well strained-layer lasers

Author

Lester, L.F. ; Schaff, W.J. ; Song, X. ; Eastman, L.F.

Author_Institution

Dept. of Electr. Eng., Cornell Univ., Ithaca, NY, USA

Volume

3

Issue

12

fYear

1991

Firstpage

1049

Lastpage

1051

Abstract

The optical and RF characteristics of short-cavity, strained-layer In/sub 0.3/Ga/sub 0.7/As graded-index separate-confinement-heterostructure (GRINSCH) multiple-quantum-well ridge waveguide lasers are described. Short-cavity-length strained-layer lasers with four In/sub 0.3/Ga/sub 0.7/As quantum wells have been fabricated using chemically assisted ion beam etching (CAIBE). These lasers have a very low K factor of 0.14 ns and a high differential gain of 1.1*10/sup -15/ cm/sup 2/. A 3 dB modulation bandwidth of 23.5 GHz has been measured on a 50 mu m cavity-length device. This is the highest reported bandwidth for a quantum well laser.<>

Keywords

III-V semiconductors; gallium arsenide; gradient index optics; indium compounds; laser cavity resonators; semiconductor junction lasers; 23.5 GHz; 50 micron; GRIN; In/sub 0.3/Ga/sub 0.7/As; MQW; RF characteristics; chemically assisted ion beam etching; diode lasers; graded-index; high differential gain; low K factor; modulation bandwidth; multiquantum-well; optical waveguides; ridge waveguide lasers; semiconductors; separate-confinement-heterostructure; short-cavity-length; strained-layer lasers; Chemical lasers; Etching; Fiber lasers; Gallium arsenide; Laser radar; Laser theory; Masers; Quantum well lasers; Radio frequency; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.117996

Filename

117996