Spontaneous emission factor of a microcavity DBR surface emitting laser. II. Effects of electron quantum confinements

Author

Baba, Toshihiko ; Hamano, Tetsuko ; Koyama, Fumio ; Iga, Kenichi

Author_Institution

Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan

Volume

28

Issue

5

fYear

1992

fDate

5/1/1992 12:00:00 AM

Firstpage

1310

Lastpage

1319

Abstract

For pt.I see ibid., vol.27, p.1347-58 (1991). A method for the theoretical analysis of the spontaneous emission factor (C factor) has been developed for microcavity distributed Bragg reflector (DBR) surface emitting lasers having various quantum-well active regions. It is shown that the C factor can be enlarged by the enhancement of mode density, the anisotropic emission, and the narrow spectral width in quantum wells. C~0.6 may be obtained with GaAs-AlAs DBRs, 0.55 μm×0.55 μm cross section of the cavity, three times vertically long cross section of quantum-wire active regions, and the spectral width of several nanometers at room temperature. This value can be further increased by utilizing a narrower spectral width expected at low temperature

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; laser cavity resonators; semiconductor junction lasers; GaAs-AlAs; III-V semiconductors; anisotropic emission; cross section; electron quantum confinements; linearly polarized lasing mode; microcavity distributed Bragg reflector surface emitting lasers; mode density; quantum wells; quantum-wire active regions; spectral width; spontaneous emission factor; theoretical analysis; Anisotropic magnetoresistance; Distributed Bragg reflectors; Laser modes; Laser theory; Microcavities; Quantum well lasers; Spontaneous emission; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.135271

Filename

135271