High-contrast/low-voltage normally on InGaAs/AlGaAs asymmetric Fabry-Perot modulator

Author

Buydens, L. ; Demeester, P. ; Yu, Z. ; Van Daele, P.

Author_Institution

Lab. of Electromagn. & Acoust., Gent Univ., Belgium

Volume

3

Issue

12

fYear

1991

Firstpage

1104

Lastpage

1106

Abstract

An asymmetric Fabry-Perot cavity modulator is proposed with a 50-period In/sub 0.15/Ga/sub 0.85/As/Al/sub 0.30/Ga/sub 0.70/As strained-layer superlattice active layer. The back Bragg reflector consists of 25 periods of GaAs/AlAs layers while for the front reflector of the device the natural reflection of the air-semiconductor interface was used. Spectral measurements as a function of the applied reverse voltages showed a change in reflectivity from 33% for 0 V reverse bias to 5% for 7 V, at a wavelength of 969 nm. This gives a maximum contrast ratio of 8.3 dB and an insertion loss of 4.9 dB. For higher voltages applied across the device, the reflectivity increases again.<>

Keywords

III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; indium compounds; optical losses; optical modulation; optical resonators; semiconductor superlattices; 4.9 dB; 969 nm; GaAs-AlAs; InGaAs-AlGaAs; air-semiconductor interface; applied reverse voltages; asymmetric Fabry-Perot cavity modulator; back Bragg reflector; front reflector; insertion loss; low-voltage; maximum contrast ratio; natural reflection; normally on; reflectivity; semiconductors; spectral measurements; strained-layer superlattice active layer; Electrooptic modulators; Fabry-Perot; Indium gallium arsenide; Laser noise; Lasers and electrooptics; Nonlinear distortion; Optical distortion; Optical modulation; Optical superlattices; Surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.118016

Filename

118016