Reliability of in-situ rapid thermal gate dielectrics in deep submicrometer MOSFET´s

Author

Zhang, Kevin X. ; Osburn, Carlton M.

Author_Institution

Dept. of Electr. Eng., Duke Univ., Durham, NC, USA

Volume

42

Issue

12

fYear

1995

fDate

12/1/1995 12:00:00 AM

Firstpage

2181

Lastpage

2188

Abstract

Several in-situ, rapid thermal gate dielectrics, 6.5-nm thick, including RTO, RTCVD, and RPECVD were used to fabricate fully implanted 0.25-μm NMOSFET´s along with Furnace gate oxides. The device reliability was studied by both channel hot-carrier stress and Fowler-Nordheim electron injection. It was found that devices having RTO or RTCVD oxides have about the same hot-carrier resistance as Furnace ones, while RPECVD oxides, deposited directly on Si without a grown oxide interface, were more susceptible to shifts. Both RTCVD and RPECVD oxides have a lower Si-SiO₂ barrier height (2.7 eV); nevertheless, RTCVD oxides show enhanced resistance against interface-state generation, threshold voltage shifts, and charging during Fowler-Nordheim stressing

Keywords

MOSFET; dielectric thin films; hot carriers; interface states; semiconductor device reliability; semiconductor-insulator boundaries; 0.25 micron; 6.5 nm; Fowler-Nordheim electron injection; Fowler-Nordheim stressing; NMOSFET; RPECVD; RTCVD; RTO; Si-SiO₂; channel hot-carrier stress; deep submicron MOSFET; device reliability; furnace gate oxides; in-situ rapid thermal gate dielectrics; interface-state generation; n-channel device; threshold voltage shifts; Chemical vapor deposition; Dielectric substrates; Dielectrics; Electrons; Etching; Furnaces; Hot carriers; MOSFET circuits; Oxidation; Rapid thermal processing; Reliability engineering; Thermal engineering; Thermal stresses; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.477777

Filename

477777