A self-aligned trenched cathode lateral insulated gate bipolar transistor with high latch-up resistance

Author

Mok, Philip K T ; Nezar, Azzouz ; Salama, C. André T

Author_Institution

Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada

Volume

42

Issue

12

fYear

1995

fDate

12/1/1995 12:00:00 AM

Firstpage

2236

Lastpage

2239

Abstract

This paper discusses a modified insulated gate bipolar transistor (LIGBT) structure using a self-aligned trenched contact at the cathode of the device which significantly reduces the parasitic p-base resistance underneath the n⁺ cathode region to suppress the latch-up. The trenched cathode LIGBT (TC-LIGBT) structure is BiCMOS compatible and the LIGBTs with latching current densities over 1200 A/cm ² have been obtained using a 4 μm technology

Keywords

BiCMOS integrated circuits; carrier density; insulated gate bipolar transistors; power bipolar transistors; semiconductor device reliability; 4 micron; TC-LIGBT; latch-up resistance; latching current densities; lateral insulated gate bipolar transistor; n⁺ cathode region; parasitic p-base resistance; self-aligned trenched contact; trenched cathode; BiCMOS integrated circuits; CMOS technology; Cathodes; Contact resistance; Current density; Insulated gate bipolar transistors; Insulation; Integrated circuit technology; Thyristors; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.477786

Filename

477786