DocumentCode
1151907
Title
Comment on "Modeling of electron-hole scattering in semiconductor devices"
Author
Mnatsakanov, T.T.
Author_Institution
All-Russian Electr. Eng. Inst., Moscow, Russia
Volume
42
Issue
12
fYear
1995
Firstpage
2251
Lastpage
2253
Abstract
For original paper see D.E. Kane and R.M. Swanson, ibid., vol.40, no.8, pp.1496-1500 (1993). A review of results on electron-hole scattering in semiconductors and semiconductor devices is presented. It is shown that the main relations governing charge carrier transport in the presence of strong electron-hole scattering have been established over the last 15 years.
Keywords
semiconductor device models; charge carrier transport; electron-hole scattering; modeling; semiconductor devices; semiconductors; Boltzmann equation; Charge carrier processes; Charge carriers; Electron devices; Electron mobility; Nonhomogeneous media; Scattering; Semiconductor devices;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.477792
Filename
477792
Link To Document