Source and drain resistance studies of short-channel MESFETs using two-dimensional device simulators

Author

Tsai, Yao-Tsung ; Grotjohn, Timothy A.

Author_Institution

Dept. of Electr. Eng., Michigan State Univ., East Lansing, MI, USA

Volume

37

Issue

3

fYear

1990

fDate

3/1/1990 12:00:00 AM

Firstpage

775

Lastpage

780

Abstract

A method for calculating the parasitic source and drain resistances in MESFETs using two-dimensional device simulators is discussed. The source and drain resistances are calculated using the power dissipation and the electron heating in the parasitic resistance regions of the device structure. The parasitic resistances are calculated as a function of both the gate and the drain bias voltages. The resistance calculation method for MESFETs has been applied to three semiconductor device simulators: a drift-diffusion method simulator, an energy transport method simulator, and a Monte Carlo particle method simulator

Keywords

III-V semiconductors; Monte Carlo methods; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; GaAs; MESFET model; Monte Carlo particle method simulator; drain bias voltages; drain resistances; drift-diffusion method simulator; electron heating; energy transport method simulator; parasitic source resistance; power dissipation; resistance calculation method; semiconductor device simulators; short channel MESFET; two-dimensional device simulators; Circuit simulation; Current measurement; Electric resistance; Electrical resistance measurement; Gallium arsenide; MESFETs; Monte Carlo methods; Resistors; Silicon; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.47785

Filename

47785