Physical DMOST modeling for high-voltage IC CAD

Author

Kim, Yeong-Seuk ; Fossum, Jerry G.

Author_Institution

Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA

Volume

37

Issue

3

fYear

1990

fDate

3/1/1990 12:00:00 AM

Firstpage

797

Lastpage

803

Abstract

A physical, seminumerical charge-based model for vertical DMOSTs is developed and implemented in SPICE. The model is derived from regional quasi-static analyses of carrier transport which implicitly characterize the device currents and charges and which require numerical solution. Newton-Raphson iterative device solutions are derived within the circuit nodal analysis framework of SPICE. PISCES simulations and measurements of test devices support the model, which is demonstrated in DC and transient SPICE simulations of VDMOSTs and high-voltage integrated circuits (HVICs)

Keywords

circuit CAD; insulated gate field effect transistors; iterative methods; numerical methods; power integrated circuits; semiconductor device models; HVIC; Newton-Raphson iterative device solutions; PISCES simulations; VDMOST; carrier transport; circuit nodal analysis; double-diffused MOS transistor; high-voltage IC CAD; high-voltage integrated circuits; numerical solution; physical DMOST modelling; regional quasi-static analyses; seminumerical charge-based model; transient SPICE simulations; vertical DMOST; Circuit analysis; Circuit simulation; Computational modeling; Design automation; Integrated circuit measurements; Integrated circuit modeling; Nonlinear equations; SPICE; Semiconductor process modeling; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.47788

Filename

47788