DocumentCode
1154189
Title
Electrically pumped room temperature CW-VCSELs with emission wavelength of 2 μm
Author
Lauer, C. ; Ortsiefer, M. ; Shau, R. ; Rosskopf, J. ; Böhm, G. ; Maute, M. ; Köhler, F. ; Amann, M.-C.
Author_Institution
Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany
Volume
39
Issue
1
fYear
2003
Firstpage
57
Lastpage
58
Abstract
Continuous-wave operation of an electrically pumped vertical-cavity surface-emitting laser (VCSEL) with an emission wavelength of 2.01 μm employing a heavily strained active region is reported.
Keywords
III-V semiconductors; indium compounds; laser cavity resonators; laser transitions; quantum well lasers; surface emitting lasers; 2.01 micron; InGaAlAs; InGaAs-InAlAs; InP; InP-based singlemode VCSEL; buried tunnel junction; continuous-wave operation; electrically pumped VCSEL; heavily strained active region; room temperature CW VCSELs; semiconductor lasers; vertical-cavity SEL;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20030057
Filename
1182349
Link To Document