DocumentCode
1154512
Title
1.3 μm GaInNAs optically-pumped vertical cavity semiconductor optical amplifier
Author
Calvez, S. ; Hopkins, J.-M. ; Macaluso, R. ; Sun, H.D. ; Dawson, Martin D. ; Jouhti, T. ; Pessa, M.
Author_Institution
Inst. of Photonics, Strathclyde Univ., Glasgow, UK
Volume
39
Issue
1
fYear
2003
Firstpage
100
Lastpage
102
Abstract
A GaInNAs/GaAs vertical cavity semiconductor optical amplifier (VCSOA) is reported. This is believed to be the first monolithic VCSOA operating at 1.3 μm. Under continuous-wave optical pumping in a singlemode fibre coupled format, gain figures of up to 17.7 dB were achieved. Amplification with 12 GHz bandwidth was obtained at 12.8 dB peak gain.
Keywords
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser transitions; optical pumping; quantum well lasers; semiconductor optical amplifiers; 1.3 micron; 12 GHz; 12.8 dB; 17.7 dB; CW optical pumping; DBR mirror; GaInNAs quantum wells; GaInNAs-GaAs; GaInNAs/GaAs vertical cavity SOA; continuous-wave optical pumping; monolithic vertical cavity SOA; optically-pumped SOA; semiconductor laser; semiconductor optical amplifier; singlemode fibre coupled format;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20030119
Filename
1182378
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