A voltage down converter with submicroampere standby current for low-power static RAMs

Author

Ishibashi, Koichiro ; Sasaki, Katsuro ; Toyoshima, Hiroshi

Author_Institution

Hitachi Ltd., Tokyo, Japan

Volume

27

Issue

6

fYear

1992

fDate

6/1/1992 12:00:00 AM

Firstpage

920

Lastpage

926

Abstract

A submicroampere standby current voltage downconverter (VDC) for high-density, low-power static RAMs is described. The current consumption of the VDC in standby mode can be decreased by using a novel low-current and temperature-independent current source circuit. The total current is less than 0.5 μA at external voltage ranging from 3 to 5 V and at temperatures ranging from -20 to 80°C. The voltage-follower circuits for standby and operation modes are stable despite the low current consumption in the standby mode. The phase margin of the voltage follower for standby mode is 50°, and that for operation mode is 90°. This indicates that the VDC is a promising circuit for battery-backup and high-density static RAMs

Keywords

CMOS integrated circuits; SRAM chips; convertors; linear integrated circuits; -20 to 80 degC; 0.5 muA; 3 to 5 V; CMOS chip; battery-backup; high density SRAMs; low-power static RAMs; submicroampere standby current; temperature-independent current source circuit; voltage down converter; voltage-follower circuits; Battery charge measurement; Circuits; Detectors; Low voltage; Power dissipation; Power supplies; Signal detection; Signal generators; Temperature distribution; Voltage measurement;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.135336

Filename

135336