Planar AlGaAs/GaAs HBT fabricated by MOCVD overgrowth with a grown base

A planar heterojunction bipolar transistor (HBT) with an AlGaAs emitter layer epitaxially grown onto a selectively defined grown base layer, where the base is grown with the collector as part of the original epi, is discussed. The transistors fabricated with this process exhibit good gain and output characteristics. Transistors with 7×7 μm² emitters have exhibited a DC current gain of 10 to 1000 for base doping from 1×10¹⁹ to 8×10¹⁷ cm³, respectively, and Early voltages ⩾100 V. The propagation delay of 19-stage ring oscillators was 87 ps/gate. The transistor-fabrication process was designed to be manufacturable, and the planar nature of the transistor surface should permit large-scale integration with good yields