DocumentCode
1155703
Title
Resonant modes of GaAs junction lasers - II: High-injection level
Author
Paoli, T. ; Ripper, Jose E. ; Zachos, Thomas H.
Author_Institution
Bell Telephone Laboratories, Inc., Murray Hill, NJ, USA
Volume
5
Issue
6
fYear
1969
fDate
6/1/1969 12:00:00 AM
Firstpage
271
Lastpage
276
Abstract
Previous work on the resonant modes of GaAs junction lasers operating near threshold is extended to include spectra obtained at currents 1.5 to 3 times the threshold level. At these currents, two families of modes are shown to oscillate simultaneously with different center frequencies. The modal families are demonstrated to correspond to different mode numbers in the direction perpendicular to the junction plane. These observations are found to be in agreement with a previously reported theory for the GaAs laser cavity, which allows a dielectric constant variation in both directions transverse to the laser axis. The general characteristics of the observed spectra are explained qualitatively in terms of a derived mode dependence of the steady-state gain function. It is suggested that the strong frequency dependence of the spatial gain distribution perpendicular to the junction plane can allow two modal families with different mode numbers perpendicular to the junction to oscillate simultaneously with different center frequencies.
Keywords
Dielectric constant; Frequency; Gallium arsenide; Geometrical optics; Laser modes; Laser theory; Microscopy; Predictive models; Resonance; Semiconductor lasers;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1969.1081952
Filename
1081952
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