DocumentCode
1155871
Title
Projecting interconnect electromigration lifetime for arbitrary current waveforms
Author
Liew, Boon-Khim ; Cheung, Nathan W. ; Hu, Chenming
Author_Institution
Dept. of Electr. Eng., California Univ., Berkeley, CA, USA
Volume
37
Issue
5
fYear
1990
fDate
5/1/1990 12:00:00 AM
Firstpage
1343
Lastpage
1351
Abstract
A vacancy-relaxation model is proposed. It predicts the DC lifetime, pulse DC (arbitrary unidirectional waveform) lifetime, pure AC lifetime, and AC-plus-DC-bias lifetime for all waveforms and all frequencies above 1 kHz. The predictions are verified by experiments and significantly raise the projected lifetimes beyond the widely assumed A dc T /J rmsm. The pure AC lifetimes of aluminum interconnect are experimentally found to be more than 103 times larger than DC lifetime for the same current density. In addition, AC stress lifetimes are observed to follow the same dependences on current magnitude and temperature, for T <300°C, as the DC stress lifetime
Keywords
aluminium alloys; electromigration; failure analysis; metallisation; silicon alloys; 1 to 104 kHz; 22 to 300 degC; AC lifetime; AC stress lifetimes; AC-plus-DC-bias lifetime; Al; AlSi; DC lifetime; current density; current waveforms; failure site; interconnect electromigration lifetime; vacancy-relaxation model; Conductors; Current density; Electromigration; Frequency; Helium; Integrated circuit interconnections; Predictive models; Pulse circuits; Stress; Temperature dependence;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.108197
Filename
108197
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