• DocumentCode
    1155871
  • Title

    Projecting interconnect electromigration lifetime for arbitrary current waveforms

  • Author

    Liew, Boon-Khim ; Cheung, Nathan W. ; Hu, Chenming

  • Author_Institution
    Dept. of Electr. Eng., California Univ., Berkeley, CA, USA
  • Volume
    37
  • Issue
    5
  • fYear
    1990
  • fDate
    5/1/1990 12:00:00 AM
  • Firstpage
    1343
  • Lastpage
    1351
  • Abstract
    A vacancy-relaxation model is proposed. It predicts the DC lifetime, pulse DC (arbitrary unidirectional waveform) lifetime, pure AC lifetime, and AC-plus-DC-bias lifetime for all waveforms and all frequencies above 1 kHz. The predictions are verified by experiments and significantly raise the projected lifetimes beyond the widely assumed Adc T/Jrmsm. The pure AC lifetimes of aluminum interconnect are experimentally found to be more than 103 times larger than DC lifetime for the same current density. In addition, AC stress lifetimes are observed to follow the same dependences on current magnitude and temperature, for T<300°C, as the DC stress lifetime
  • Keywords
    aluminium alloys; electromigration; failure analysis; metallisation; silicon alloys; 1 to 104 kHz; 22 to 300 degC; AC lifetime; AC stress lifetimes; AC-plus-DC-bias lifetime; Al; AlSi; DC lifetime; current density; current waveforms; failure site; interconnect electromigration lifetime; vacancy-relaxation model; Conductors; Current density; Electromigration; Frequency; Helium; Integrated circuit interconnections; Predictive models; Pulse circuits; Stress; Temperature dependence;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.108197
  • Filename
    108197