Three-dimensional model of gate current flow in thyristor. II. Numerical examples

Author

Lisik, Zbigniew ; Turowski, Marek

Author_Institution

Inst. of Electron., Tech. Univ., Lodz, Poland

Volume

37

Issue

5

fYear

1990

fDate

5/1/1990 12:00:00 AM

Firstpage

1389

Lastpage

1396

Abstract

For Part I see ibid., vol.37, no.5, p.1383-8 (1990). Some numerical results which show the advantages of the model are discussed. Advantages include a rapid evaluation of gate driving conditions along the arm of the gate contact for various constructional parameters of a thyristor, an example of the determination of the shape of the initially turned-on region located along one arm of the digital gate, and some results concerning the influence of constructional parameters on the width of the initially turned-on area. The influence of the interfacial metal-semiconductor contact resistance on the accuracy of the numerical simulation is also examined

Keywords

contact resistance; current density; electronic engineering computing; numerical analysis; semiconductor device models; thyristors; 3D model; current density; gate contact; gate current flow; gate driving conditions; interfacial metal-semiconductor contact resistance; numerical results; numerical simulation; thyristor; turned-on region; Cathodes; Conductivity; Current distribution; Distributed computing; Information analysis; Numerical simulation; Shape; Thyristors; Two dimensional displays; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.108202

Filename

108202