Investigation of layered structure SAW devices fabricated using low temperature grown AlN thin film on GaN/sapphire

Author

Lin, Hui-Feng ; Wu, Chun-Te ; Chien, Wei-Cheng ; Chen, Sheng-Wen ; Kao, Hui-Ling ; Chyi, Jen-Inn ; Chen, Jyh-Shin

Author_Institution

Dept. of Electron. Eng., Chung Yuan Christian Univ., Chung-li, Taiwan

Volume

52

Issue

5

fYear

2005

fDate

5/1/2005 12:00:00 AM

Firstpage

923

Lastpage

926

Abstract

Epitaxial AlN films have been grown on GaN/sapphire using helicon sputtering at 300/spl deg/C. The surface acoustic wave (SAW) filters fabricated on AlN/GaN/sapphire exhibit more superior characteristics than those made on GaN/sapphire. This composite structure of AlN on GaN may bring about the development of high-frequency components, which integrate and use their semiconducting, optoelectronic, and piezoelectric properties.

Keywords

III-V semiconductors; aluminium compounds; epitaxial growth; optoelectronic devices; piezoelectric semiconductors; piezoelectricity; semiconductor epitaxial layers; sputtered coatings; surface acoustic wave filters; wide band gap semiconductors; 300 degC; AlN; AlN-GaN-Al/sub 2/O/sub 3/; GaN-Al/sub 2/O/sub 3/; composite structure; epitaxial films; helicon sputtering; high-frequency components; layered structure devices; low temperature grown thin film; optoelectronic properties; piezoelectric properties; semiconducting properties; surface acoustic wave devices; surface acoustic wave filters; Gallium nitride; Piezoelectric devices; Piezoelectric films; Piezoelectric materials; Sputtering; Substrates; Surface acoustic wave devices; Surface acoustic waves; Temperature; Thin film devices;

fLanguage

English

Journal_Title

Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on

Publisher

ieee

ISSN

0885-3010

Type

jour

DOI

10.1109/TUFFC.2005.1503979

Filename

1503979