8/spl times/8 independently addressable vertical-cavity surface-emitting laser diode arrays grown by MOCVD

Author

Kohama, Yoshitaka ; Ohiso, Yoshitaka ; Fukushima, Seiji ; Kurokawa, Takashi

Author_Institution

NTT Opto-Electron. Labs., Kanagawa, Japan

Volume

6

Issue

8

fYear

1994

Firstpage

918

Lastpage

920

Abstract

The first 8/spl times/8 independently addressable vertical-cavity surface-emitting laser diode arrays have been grown by MOCVD. They showed not only good I-L characteristics, such as low threshold current and voltage, but excellent uniformity of threshold current (3.39/spl plusmn/O.11 mA) and lasing wavelength (850.93/spl plusmn/0.28 nm). These results shows that the high-productivity of MOCVD growth technique is applicable to the fabrication of such laser diode arrays.<>

Keywords

CVD coatings; III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium arsenide; laser cavity resonators; semiconductor laser arrays; 3.39 mA; 850.93 nm; Al/sub 0.2/Ga/sub 0.8/As/GaAs multiple quantum well active layers; AlGaAs-GaAs; MOCVD growth technique; fabrication; independently addressable vertical-cavity surface-emitting laser diode arrays; lasing wavelength; n-GaAs substrates; threshold current; threshold voltage; Diode lasers; Gallium arsenide; Laser modes; MOCVD; Mirrors; Molecular beam epitaxial growth; Optical arrays; Semiconductor laser arrays; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.313051

Filename

313051