• DocumentCode
    1159393
  • Title

    Symmetric self-electro-optic effect device using symmetric-cavity quantum well electroabsorption modulators

  • Author

    Zouganeli, P. ; Grindle, R.J. ; Rivers, A.W. ; Parry, G. ; Roberts, J.S.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK
  • Volume
    6
  • Issue
    8
  • fYear
    1994
  • Firstpage
    939
  • Lastpage
    941
  • Abstract
    We report results obtained from a symmetric-cavity Fabry-Perot quantum well modulator in GaAs/AlGaAs. A reflection-change of /spl ap/46% with an insertion loss of 1.3 dB are obtained in the normally-off mode under a reverse bias voltage of 7.5 V. Bistable operation is demonstrated, for the first time using such devices, by connecting two modulators in the symmetric self-electro-optic effect device configuration.<>
  • Keywords
    III-V semiconductors; SEEDs; aluminium compounds; electro-optical devices; electroabsorption; gallium arsenide; losses; semiconductor quantum wells; 1.3 dB; 7.5 V; GaAs-AlGaAs; GaAs/AlGaAs; bistable operation; insertion loss; reflection-change; reverse bias voltage; symmetric self-electro-optic effect device; symmetric self-electro-optic effect device configuration; symmetric-cavity quantum well electroabsorption modulators; Absorption; Excitons; Fabry-Perot; Insertion loss; Joining processes; Mirrors; Optical reflection; Reflectivity; Rivers;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/68.313058
  • Filename
    313058
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1159393