Fully depleted, back-illuminated charge-coupled devices fabricated on high-resistivity silicon

Author

Holland, Stephen E. ; Groom, Donald E. ; Palaio, Nick P. ; Stover, Richard J. ; Wei, Mingzhi

Author_Institution

Lawrence Berkeley Nat. Lab., CA, USA

Volume

50

Issue

1

fYear

2003

fDate

1/1/2003 12:00:00 AM

Firstpage

225

Lastpage

238

Abstract

Charge-coupled devices (CCDs) have been fabricated on high-resistivity, n-type silicon. The resistivity, on the order of 10 000 Ω·cm, allows for depletion depths of several hundred micrometers. Fully depleted, back-illuminated operation is achieved by the application of a bias voltage to an ohmic contact on the wafer back side consisting of a thin in situ doped polycrystalline silicon layer capped by indium tin oxide and silicon dioxide. This thin contact allows for a good short-wavelength response, while the relatively large depleted thickness results in a good near-infrared response.

Keywords

CCD image sensors; MOSFET; astronomical telescopes; capacitance; dark conductivity; focal planes; integrated circuit noise; leakage currents; ohmic contacts; 1E4 ohmcm; ITO; ITO capping; InSnO; SIMS depth profile; Si; SiO₂; SiO₂ capping; astronomical telescopes; bias voltage; buried channel PMOSFET; charge-coupled devices; dark current; depletion depths; fully depleted back-illuminated CCDs; high-resistivity n-Si; inverse square capacitance; near-infrared response; noise; ohmic contact; reverse leakage current; short-wavelength response; thin in situ doped polycrystalline silicon layer; wafer back side; Absorption; Charge coupled devices; Conductivity; Dark current; Degradation; Laboratories; Observatories; Signal to noise ratio; Silicon; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2002.806476

Filename

1185186