PSP: An Advanced Surface-Potential-Based MOSFET Model for Circuit Simulation

Author

Gildenblat, Gennady ; Li, Xin ; Wu, Weimin ; Wang, Hailing ; Jha, Amit ; Van Langevelde, Ronald ; Smit, Geert D J ; Scholten, Andries J. ; Klaassen, Dirk B M

Author_Institution

Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA

Volume

53

Issue

9

fYear

2006

Firstpage

1979

Lastpage

1993

Abstract

This paper describes the latest and most advanced surface-potential-based model jointly developed by The Pennsylvania State University and Philips. Specific topics include model structure, mobility and velocity saturation description, further development and verification of symmetric linearization method, recent advances in the computational techniques for the surface potential, modeling of gate tunneling current, inclusion of the retrograde impurity profile, and noise sources. The emphasis of this paper is on incorporating the recent advances in MOS device physics and modeling within the compact modeling context

Keywords

MOSFET; circuit simulation; linearisation techniques; semiconductor device models; surface potential; tunnelling; MOSFET model; circuit simulation; compact modeling; computational techniques; gate tunneling current; mobility description; model structure; noise sources; retrograde impurity profile; surface potential; symmetric linearization method; velocity saturation description; Circuit simulation; Computational efficiency; Context modeling; Equations; Fabrication; MOSFET circuits; Mathematical model; Physics; Radio frequency; Semiconductor process modeling; Compact model; MOSFET; surface potential; surface-potential-based (PSP) model;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2005.881006

Filename

1677832