DocumentCode
1159813
Title
Mobility enhancement in surface channel SiGe PMOSFETs with HfO2 gate dielectrics
Author
Shi, Zhonghai ; Onsongo, David ; Onishi, Katsunori ; Lee, Jack C. ; Banerjee, Sanjay K.
Author_Institution
Microelectron. Res. Center, Univ. of Texas, Austin, TX, USA
Volume
24
Issue
1
fYear
2003
Firstpage
34
Lastpage
36
Abstract
We report for the first time drive current enhancement and higher mobilities than the universal mobility for SiO/sub 2/ on Si in compressively strained Si/sub 1-x/Ge/sub x/-on-Si surface channel PMOSFETs with HfO/sub 2/ gate dielectrics, for gate lengths (L/sub G/) down to 180 nm. Thirty six percent drive current enhancement was achieved for Si/sub 0.8/Ge/sub 0.2/ channel PMOSFETs compared to Si PMOSFETs with HfO/sub 2/ gate dielectric. We demonstrate that using Si/sub 1-x/Ge/sub x/ in the channel may be one way to recover the mobility degradation due to the use of HfO/sub 2/ on Si.
Keywords
Ge-Si alloys; MOSFET; dielectric thin films; hafnium compounds; hole mobility; semiconductor device measurement; semiconductor materials; 180 nm; HfO/sub 2/; HfO/sub 2/ gate dielectrics; Si/sub 0.8/Ge/sub 0.2/-Si; compressively strained Si/sub 1-x/Ge/sub x/-on-Si surface channel PMOSFETs; drive current enhancement; gate length; mobility degradation recovery; mobility enhancement; surface channel SiGe PMOSFETs; Capacitance; Capacitive sensors; Degradation; Dielectrics; Germanium silicon alloys; Hafnium oxide; Lifting equipment; MOSFET circuits; Rapid thermal annealing; Silicon germanium;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2002.807020
Filename
1185202
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