DocumentCode
1160470
Title
A new derivation of the law of the junctions
Author
Pota, Hemanshu Roy
Author_Institution
Sch. of Inf. Technol. & Electr. Eng., Univ. Coll., Canberra, ACT, Australia
Volume
47
Issue
4
fYear
2004
Firstpage
497
Lastpage
499
Abstract
In this paper, the author presents students with a new and simple derivation of the law of the junctions. The law of the junctions is crucial to the correct understanding of the operation of the bipolar junction transistor. The integral of the product of the density of energy states and Fermi-Dirac distribution function is used to derive the density of free electrons and holes crossing from one side to another at a pn-junction under an external applied voltage.
Keywords
Dirac equation; bipolar transistors; p-n junctions; Fermi-Dirac distribution; bipolar junction transistor; electrons crossing; energy distribution; law of the junctions; pn-junction; Australia; Charge carrier processes; Distribution functions; Electrons; Energy states; Helium; Information technology; Semiconductor diodes; Semiconductor impurities; Voltage; 65; BJT; Bipolar junction transistor; diode current; electrons crossing over; pn-junction built-in potential; the law of the junctions;
fLanguage
English
Journal_Title
Education, IEEE Transactions on
Publisher
ieee
ISSN
0018-9359
Type
jour
DOI
10.1109/TE.2004.832884
Filename
1356099
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