• DocumentCode
    1161421
  • Title

    Analysis of the snubberless operation of the emitter turn-off thyristor (ETO)

  • Author

    Li, Yuxin ; Huang, Alex Q. ; Motto, Kevin

  • Author_Institution
    Analog Devices Inc., San Jose, CA, USA
  • Volume
    18
  • Issue
    1
  • fYear
    2003
  • fDate
    1/1/2003 12:00:00 AM
  • Firstpage
    30
  • Lastpage
    37
  • Abstract
    The emitter turn-off thyristor (ETO) is a hybrid power semiconductor device that turns off the GTO under the unity turn-off gain condition. This paper analyzes the failure mechanism in the snubberless turn-off of the ETO and proposes solutions that extend the snubberless switching capability of the ETO to the theoretical limitation of the device. Theoretical analysis and experimental results are presented.
  • Keywords
    equivalent circuits; power semiconductor switches; semiconductor device models; switching; thyristors; GTO; emitter turn-off thyristor; failure mechanism; hybrid power semiconductor device; snubberless operation analysis; snubberless switching capability; snubberless turn-off; unity turn-off gain condition; Equivalent circuits; Failure analysis; Helium; Power semiconductor devices; Power semiconductor switches; Protection; Snubbers; Temperature; Thyristors; Voltage;
  • fLanguage
    English
  • Journal_Title
    Power Electronics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0885-8993
  • Type

    jour

  • DOI
    10.1109/TPEL.2002.807087
  • Filename
    1187321