DocumentCode
1161421
Title
Analysis of the snubberless operation of the emitter turn-off thyristor (ETO)
Author
Li, Yuxin ; Huang, Alex Q. ; Motto, Kevin
Author_Institution
Analog Devices Inc., San Jose, CA, USA
Volume
18
Issue
1
fYear
2003
fDate
1/1/2003 12:00:00 AM
Firstpage
30
Lastpage
37
Abstract
The emitter turn-off thyristor (ETO) is a hybrid power semiconductor device that turns off the GTO under the unity turn-off gain condition. This paper analyzes the failure mechanism in the snubberless turn-off of the ETO and proposes solutions that extend the snubberless switching capability of the ETO to the theoretical limitation of the device. Theoretical analysis and experimental results are presented.
Keywords
equivalent circuits; power semiconductor switches; semiconductor device models; switching; thyristors; GTO; emitter turn-off thyristor; failure mechanism; hybrid power semiconductor device; snubberless operation analysis; snubberless switching capability; snubberless turn-off; unity turn-off gain condition; Equivalent circuits; Failure analysis; Helium; Power semiconductor devices; Power semiconductor switches; Protection; Snubbers; Temperature; Thyristors; Voltage;
fLanguage
English
Journal_Title
Power Electronics, IEEE Transactions on
Publisher
ieee
ISSN
0885-8993
Type
jour
DOI
10.1109/TPEL.2002.807087
Filename
1187321
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