Modeling of the MOS transistor for high frequency analog design

Author

Vandeloo, Paul J.V. ; Sansen, Willy M C

Author_Institution

IMEC, Katholieke Univ. Leuven, Belgium

Volume

8

Issue

7

fYear

1989

fDate

7/1/1989 12:00:00 AM

Firstpage

713

Lastpage

723

Abstract

A high-frequency (HF) small-signal model is presented that is capable of describing accurately the MOS transistor (in saturation) at frequencies beyond the cutoff frequency. The model is carefully compared to other models. It is shown how all the circuit elements of the model can be measured. This measurement method uses S-parameter measurements, computer-controlled calibration techniques of the test setup and network analyzer, mathematical transformations of the S -parameters to other linear parameters, and extraction routines to fit the data towards the HF model. The model is finally used in the design of an HF optical transconductance amplifier to prove that this model is much more accurate than the classical models at higher frequencies

Keywords

S-parameters; equivalent circuits; insulated gate field effect transistors; semiconductor device models; solid-state microwave devices; HF optical transconductance amplifier; HF small signal model; MOS transistor; S-parameter measurements; circuit elements; computer-controlled calibration; cutoff frequency; equivalent circuits; extraction routines; high frequency analog design; linear parameters; mathematical transformations; network analyzer; saturation; Calibration; Circuit testing; Computer networks; Cutoff frequency; Data mining; Hafnium; MOSFETs; Mathematical model; Optical design; Stimulated emission;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.31528

Filename

31528