• DocumentCode
    1163717
  • Title

    Very long current transients in reverse-biased almost ideal n/sup +/-p junctions

  • Author

    Basso, G. ; Pellegrini, B. ; Polignano, M.L. ; Saletti, R. ; Terreni, P.

  • Author_Institution
    Istituto di Electron. e Telecommun., Pisa Univ., Italy
  • Volume
    10
  • Issue
    1
  • fYear
    1989
  • Firstpage
    36
  • Lastpage
    38
  • Abstract
    The current transients due to a change in reverse-bias voltage in almost ideal n/sup +/-p junctions obtained by proper gettering processes are discussed. Very long relaxation phenomena are observed. The transient current is fitted by a t/sup -v/ law with v approximately=0.7 and by an exponential with a relaxation time of 45 min. The transient current amplitude is virtually proportional to the volume of the depletion region swept by changing the reverse bias.<>
  • Keywords
    getters; p-n homojunctions; transients; almost ideal n/sup +/-p junctions; depletion region; gettering; long current transients; relaxation phenomena; relaxation time; reverse-bias voltage; transient current amplitude; Capacitance; Containers; Copper; Diodes; Gettering; Glass; Ice; Oxidation; Silicon compounds; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.31674
  • Filename
    31674
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1163717