DocumentCode
1163833
Title
Continuous-wave operation of GaInNAsSb distributed feedback lasers at 1.5 /spl mu/m
Author
Gollub, D. ; Kamp, M. ; Forchel, A. ; Seufert, J. ; Bank, S.R. ; Wistey, M.A. ; Yuen, H.B. ; Goddard, L.L. ; Harris, J.S.
Author_Institution
Univ. Wurzburg, Germany
Volume
40
Issue
23
fYear
2004
Firstpage
1487
Lastpage
1488
Abstract
GaAs-based singlemode emission at 1.5 /spl mu/m has been realised for the first time in continuous-wave operation. GaInNAsSb active-layer material and GaAsN strain-compensating barriers have been used in combination with lateral distributed feedback. Laser diodes with a threshold current of 95 mA, an external efficiency of 0.15 W/A and a maximum output power of more than 10 mW could be demonstrated. A sidemode suppression ratio better than 31 dB could be realised at a singlemode emission wavelength of 1496 nm.
Keywords
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; semiconductor lasers; wide band gap semiconductors; 1.5 micron; 1496 nm; 95 mA; GaAs based singlemode emission; GaInNAsSb; GalnNAsSb distributed feedback lasers; continuous wave operation; laser diodes; sidemode suppression ratio; strain-compensating barriers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20046601
Filename
1358952
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