• DocumentCode
    1164326
  • Title

    Continuous-wave operation of terahertz quantum-cascade lasers

  • Author

    Barbieri, Stefano ; Alton, Jesse ; Dhillon, Sukhdeep S. ; Beere, Harvey E. ; Evans, Michael ; Linfield, Edmund H. ; Davies, A. Giles ; Ritchie, David A. ; Köhler, Rüdeger ; Tredicucci, Alessandro ; Beltram, F.

  • Author_Institution
    TeraView Ltd., Cambridge, UK
  • Volume
    39
  • Issue
    4
  • fYear
    2003
  • fDate
    4/1/2003 12:00:00 AM
  • Firstpage
    586
  • Lastpage
    591
  • Abstract
    We report continuous-wave (CW) operation of a 4.4-THz quantum-cascade laser grown in the GaAs-AlGaAs materials system by molecular beam epitaxy. The device operates at 4 K with a threshold current of 160 mA, and an output power of ∼25 μW. In pulsed mode, the maximum operating temperature is 52 K, with a threshold current of 108 mA at 4 K. CW lasing was achieved by using a small cavity ridge area (60×600 μm), and by coating one of the laser facets. These two features allowed for a substantial decrease of the threshold current and therefore reduced detrimental heating effects. The role played by the lateral resistance of the 800-nm GaAs layer underneath the active region was also investigated. Experimental data is presented showing that the temperature of the active region, which eventually hinders CW lasing, can be substantially influenced by the value of this lateral resistance.
  • Keywords
    III-V semiconductors; aluminium compounds; current density; electric resistance; gallium arsenide; molecular beam epitaxial growth; quantum cascade lasers; semiconductor growth; submillimetre wave lasers; 108 mA; 160 mA; 25 muW; 4 K; 4.4 THz; 52 K; 60 micron; 600 micron; 800 nm; CW operation; GaAs-Al0.15Ga0.85As; GaAs-AlGaAs; GaAs-AlGaAs materials system; active region; active region temperature; coating; continuous-wave operation; detrimental heating effects; laser facets; lateral resistance; maximum operating temperature; molecular beam epitaxy; output power; pulsed mode; small cavity ridge area; terahertz quantum-cascade lasers; threshold current; Coatings; Gallium arsenide; Heating; Laser modes; Molecular beam epitaxial growth; Optical materials; Optical pulses; Power generation; Temperature; Threshold current;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.2003.809328
  • Filename
    1188761