DocumentCode
1164326
Title
Continuous-wave operation of terahertz quantum-cascade lasers
Author
Barbieri, Stefano ; Alton, Jesse ; Dhillon, Sukhdeep S. ; Beere, Harvey E. ; Evans, Michael ; Linfield, Edmund H. ; Davies, A. Giles ; Ritchie, David A. ; Köhler, Rüdeger ; Tredicucci, Alessandro ; Beltram, F.
Author_Institution
TeraView Ltd., Cambridge, UK
Volume
39
Issue
4
fYear
2003
fDate
4/1/2003 12:00:00 AM
Firstpage
586
Lastpage
591
Abstract
We report continuous-wave (CW) operation of a 4.4-THz quantum-cascade laser grown in the GaAs-AlGaAs materials system by molecular beam epitaxy. The device operates at 4 K with a threshold current of 160 mA, and an output power of ∼25 μW. In pulsed mode, the maximum operating temperature is 52 K, with a threshold current of 108 mA at 4 K. CW lasing was achieved by using a small cavity ridge area (60×600 μm), and by coating one of the laser facets. These two features allowed for a substantial decrease of the threshold current and therefore reduced detrimental heating effects. The role played by the lateral resistance of the 800-nm GaAs layer underneath the active region was also investigated. Experimental data is presented showing that the temperature of the active region, which eventually hinders CW lasing, can be substantially influenced by the value of this lateral resistance.
Keywords
III-V semiconductors; aluminium compounds; current density; electric resistance; gallium arsenide; molecular beam epitaxial growth; quantum cascade lasers; semiconductor growth; submillimetre wave lasers; 108 mA; 160 mA; 25 muW; 4 K; 4.4 THz; 52 K; 60 micron; 600 micron; 800 nm; CW operation; GaAs-Al0.15Ga0.85As; GaAs-AlGaAs; GaAs-AlGaAs materials system; active region; active region temperature; coating; continuous-wave operation; detrimental heating effects; laser facets; lateral resistance; maximum operating temperature; molecular beam epitaxy; output power; pulsed mode; small cavity ridge area; terahertz quantum-cascade lasers; threshold current; Coatings; Gallium arsenide; Heating; Laser modes; Molecular beam epitaxial growth; Optical materials; Optical pulses; Power generation; Temperature; Threshold current;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.2003.809328
Filename
1188761
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