• DocumentCode
    1164389
  • Title

    Highly doped 1.55 μm GaxIn1-xAs/InP distributed Bragg reflector stacks

  • Author

    Guy, P. ; Woodbridge, Karl ; Hopkinson, Mark

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Univ. Coll. London
  • Volume
    30
  • Issue
    18
  • fYear
    1994
  • fDate
    9/1/1994 12:00:00 AM
  • Firstpage
    1526
  • Lastpage
    1527
  • Abstract
    The authors have investigated 20 period lattice matched mirror stacks doped to 5×1018 cm-1 and 1019 cm-1 at 1.55 μm in GaxIn1-xAs/InP and have obtained greater than 95% reflectivity over 100 nm and peak reflectivities up to 98%
  • Keywords
    III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; heavily doped semiconductors; indium compounds; integrated optoelectronics; mirrors; semiconductor lasers; 1.55 micron; GaxIn1-xAs/InP; GaInAs-InP; distributed Bragg reflector stacks; peak reflectivities; period lattice matched mirror stacks; reflectivity; semiconductor lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19941055
  • Filename
    317056
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1164389