• DocumentCode
    1165614
  • Title

    High temperature (90 degrees C) CW operation of 646 nm InGaAlP laser containing multiquantum barrier

  • Author

    Rennie, J. ; Watanabe, Manabu ; Okajima, M. ; Hatakoshi, G.

  • Author_Institution
    Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
  • Volume
    28
  • Issue
    2
  • fYear
    1992
  • Firstpage
    150
  • Lastpage
    151
  • Abstract
    CW laser operation of a 646 nm InGaAlP laser, incorporating a multiquantum barrier (MQB), is shown for the first time. The maximum temperature of operation was raised by 20 degrees C, in comparison to an identical laser without an MQB layer to 90 degrees C. This increase is taken as direct evidence of the authenticity of the MQB effect.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser transitions; semiconductor junction lasers; 646 nm; 90 degC; CW operation; InGaAlP laser; MQB layer; high temperature operation; multiquantum barrier;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920093
  • Filename
    118937
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1165614