DocumentCode
1165790
Title
20W CW monolithic AlGaAs (810 nm) laser diode arrays
Author
Sakamoto, Makoto ; Scifres, D.R.
Author_Institution
Spectra Diodes Labs., San Jose, CA, USA
Volume
28
Issue
2
fYear
1992
Firstpage
178
Lastpage
180
Abstract
Good continuous-wave (CW) lifetimes have been demonstrated for 1 cm wide monolithic AlGaAs laser diode arrays (810 nm) with a 4800 mu m total aperture width at a power level of 20 W. This represents the highest CW power level at which long lifetimes have been obtained.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; optical pumping; semiconductor laser arrays; 20 W; 4800 micron; 810 nm; AlGaAs laser diode arrays; CW lifetimes; power level; total aperture width;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920111
Filename
118955
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