DocumentCode
1165963
Title
RFIC TaN/SrTiO 
TaN MIM Capacitors With 35fF 
Capacitance Density
Author
Huang, C.C. ; Chiang, K.C. ; Kao, H.L. ; Chin, Albert ; Chen, W.J.
Author_Institution
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu
Volume
16
Issue
9
fYear
2006
Firstpage
493
Lastpage
495
Abstract
A very high density of 35 fF/mum2 is measured in a radio frequency (RF) metal-insulator-metal (MIM) capacitor using high-kappa (kappa=169) SrTiO3 fabricated by very large scale integration (VLSI) back-end integration. A very small capacitance reduction of 4.1% from 100kHz to 10GHz, low leakage current of 1times10-7 A/cm2 at 1V are simultaneously measured. The small voltage dependence of a capacitance DeltaC/C of 637ppm is also obtained at 2GHz, which ensures this MIM capacitor useful for high precision circuits operated at a RF regime
Keywords
MIM devices; VLSI; capacitors; high-k dielectric thin films; leakage currents; radiofrequency integrated circuits; strontium compounds; tantalum compounds; 1 V; 100 kHz to 10 GHz; MIM capacitors; RFIC; TaN-SrTiO3-TaN; VLSI; back-end integration; capacitance density; capacitance reduction; high precision circuits; high-k dielectric; leakage current; metal-insulator-metal capacitor; radio frequency integrated circuit; very large scale integration; Capacitance measurement; Current measurement; Density measurement; Frequency measurement; Leakage current; MIM capacitors; Metal-insulator structures; Radio frequency; Radiofrequency integrated circuits; Very large scale integration; Capacitor; International Technology Roadmap for Semiconductors (ITRS); SrTiO; metal-insulator-metal (MIM); radio frequency integrated circuit (RF IC);
fLanguage
English
Journal_Title
Microwave and Wireless Components Letters, IEEE
Publisher
ieee
ISSN
1531-1309
Type
jour
DOI
10.1109/LMWC.2006.880709
Filename
1683803
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