Low-temperature buffer GaAs MESFET technology for high-speed integrated circuit applications

Author

Delaney, M.J. ; Chou, C.S. ; Larson, Lawerance E. ; Jensen, Joseph F. ; Deakin, D.S. ; Brown, April S. ; Hooper, Willaim W. ; Thompson, M.A. ; McCray, L.G. ; Rosenbaum, Steven E.

Author_Institution

Hughes Res. Lab., Malibu, CA, USA

Volume

10

Issue

8

fYear

1989

Firstpage

355

Lastpage

357

Abstract

The fabrication of high-performance digital integrated circuits with low-temperature buffer (LTB) GaAs MESFET technology is presented. Individual 0.2- mu m-gate-length transistors show a g/sub m/ of 600 mS/mm and an extrapolated f/sub T/ of 80 GHz. Backgating and light sensitivity are eliminated with the LTB technology. Static source-coupled FET logic frequency dividers exhibit a maximum clock rate of 22 GHz.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; digital integrated circuits; field effect integrated circuits; frequency dividers; gallium arsenide; integrated circuit technology; semiconductor technology; 0.2 micron; 600 mS; 80 GHz; GaAs; MESFET technology; digital integrated circuits; gate length; high-speed integrated circuit; low temperature buffer technology; maximum clock rate; source-coupled FET logic frequency dividers; transconductance; Digital integrated circuits; Gallium arsenide; High speed integrated circuits; Integrated circuit technology; MESFET integrated circuits; MODFET circuits; Molecular beam epitaxial growth; Substrates; Surface morphology; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.31755

Filename

31755