Extreme electric loads at the ultra-thin films of the silicon oxide with inhomogeneous boundary

The electrical connectivity limits of ion and electron conductivity processes in ultrathin dielectric of digital and analog devices at the approach extreme loads were estimated. Exceeding of critical electric fields, current, cumulative energy, mobile charge intensity with inhomogeneity in architecture were considered as conducted interference of dielectric films. The standards of quality parameters for dielectric films´ conducted interference were set up: electric field intensity deviation from the critical value, temporary overvoltage, ion and energy overload.